MPS750 -2a , -60v pnp plastic encapsulated transistor elektronische bauelemente 26-jul-2012 rev. a page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 2 base 1 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features general purpose amplification. absolute maximum ratings (t a =25c unless otherwise noted) parameter symbol rating unit collector to base voltage v cbo -60 v collector to emitter voltage v ceo -40 v emitter to base voltage v ebo -5 v collector current - continuous i c -2 a collector power dissipation p c 625 mw thermal resistance from junction to ambient r ja 200 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo -60 - - v i c = -0.1ma, i e =0 collector to emitter breakdown voltage v (br)ceo -40 - - v i c = -10ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -0.01ma, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -60v, i e =0 emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 dc current gain h fe 75 - - v ce = -2v, i c = -50ma 75 - 400 v ce = -2v, i c = -500ma 75 - - v ce = -2v, i c = -1a 40 - - v ce = -2v, i c = -2a collector to emitter saturation voltage v ce(sat) - - -0.5 v i c = -2a, i b = -200ma - - -0.3 i c = -1a, i b = -100ma base to emitter saturation voltage v be (sat) - - -1.2 v i c = -1a, i b = -100ma base to emitter voltage v be - - 1 v i c = -1a, v ce = -2v transition frequency f t 75 - - mhz v ce = -5v, i c = -50ma, f=100mhz note: 1. pulse test: pulse width 300 s, duty cycle 2.0%. to - 92 ref. millimeter ref. millimeter min. max. min. max. a 4.40 4.70 f 0.30 0.51 b 4.30 4.70 g 1.27 typ. c 12.70 - h 1. 10 1.40 d 3.30 3.81 j 2.42 2.66 e 0.36 0.56 k 0.36 0.76 1 11 1 emitter 2 22 2 base 3 33 3 collector
|
